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dc.contributor.authorSchönhöbel Sánchez, Ana María ORCID
dc.contributor.authorGutiérrez Etxebarria, Jon
dc.contributor.authorBarandiarán García, José Manuel
dc.date.accessioned2024-08-06T11:04:48Z
dc.date.available2024-08-06T11:04:48Z
dc.date.issued2024-07
dc.identifier.citationRevista Mexicana de Física 70(4) : (2024) // Article ID 041602es_ES
dc.identifier.issn0035-001X
dc.identifier.urihttp://hdl.handle.net/10810/69170
dc.description.abstractIn this work we designed an experimental setup based on a double coil and an electromagnet to measure the magnetoelectric effect of a PZT/Ni50.5Mn27.9Ga21.6/PZT laminate composite, made of a bulk single crystal of Ni50.5Mn27.9Ga21.6 shape memory alloy. The shape memory alloy showed a martensitic transformation at 298 K, a Curie temperature at 368 K and room temperature magnetization of 2.87 uB/f.u. Strain response was found to be between 3% and 4% for magnetic fields greater than or equal to 4 kOe. As for the magnetoelectric effect, the induced voltages were moderate, increasing linearly with the frequency. There was a slight change in the magnetoelectric response with the DC applied magnetic field. For low frequencies, the magnetoelectric voltage was on the order of 10 mV and for higher frequencies about 50 mV. The best magnetoelectric coefficient (215 mV/cmOe) was obtained under an AC field of 1 Oe and a static magnetic field of 7 kOe.es_ES
dc.description.sponsorshipThis work was supported by the Ministry of Economy and Competitiveness (SPAIN) under the project MULTI- MART RTI2018-094683-B-C55 (MCIU/AEI/FEDER, UE).es_ES
dc.language.isoenges_ES
dc.publisherSociedad Mexicana de Físicaes_ES
dc.relationinfo:eu-repo/grantAgreement/MICIU/RTI2018-094683-B-C55es_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/es/*
dc.subjectmagnenoelectric effectes_ES
dc.subjectNi-Mn-Gaes_ES
dc.subjectshape memory alloyses_ES
dc.subjectbulk single crystales_ES
dc.titleMagnetoelectric effect of PZT/Ni50.5Mn27.9Ga21.6/PZT laminate composite: design and measurementes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.holder(c) 2024 A. M. Schönhöbel, J. Gutiérrez, M. Barandiarán. This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.es_ES
dc.rights.holderAtribución-NoComercial-SinDerivadas 3.0 España*
dc.relation.publisherversionhttps://rmf.smf.mx/ojs/index.php/rmf/article/view/6817es_ES
dc.identifier.doi10.31349/RevMexFis.70.041602
dc.departamentoesElectricidad y electrónicaes_ES
dc.departamentoeuElektrizitatea eta elektronikaes_ES


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(c) 2024 A. M. Schönhöbel, J. Gutiérrez, M. Barandiarán.
This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.
Except where otherwise noted, this item's license is described as (c) 2024 A. M. Schönhöbel, J. Gutiérrez, M. Barandiarán. This work is licensed under a Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International License.