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dc.contributor.authorMoreno López, Juan Carlos
dc.contributor.authorFedi, Filippo
dc.contributor.authorArgentero, Giacomo
dc.contributor.authorCarini, Marco
dc.contributor.authorChimborazo, Johnny
dc.contributor.authorMeyer, Jannik
dc.contributor.authorPichler, Thomas
dc.contributor.authorMateo Alonso, Aurelio ORCID
dc.contributor.authorAyala, Paola
dc.date.accessioned2021-02-12T10:08:59Z
dc.date.available2021-02-12T10:08:59Z
dc.date.issued2020-10-08
dc.identifier.citationJournal Of Physical Chemistry C 124(40) : 22150-22157 (2020)es_ES
dc.identifier.issn1932-7447
dc.identifier.issn1932-7455
dc.identifier.urihttp://hdl.handle.net/10810/50150
dc.description.abstractThe on-surface synthesis of atomically flat N-doped graphene on oxidized copper is presented. Besides circumventing the almost standard use of metallic substrates for growth, this method allows producing graphene with similar to 2.0 at % N in a substitutional configuration directly decoupled from the substrate. Angle-resolved photoemission shows a linear energy-momentum dispersion where the Dirac point lies at the Fermi level. Additionally, the N functional centers can be selectively tailored in sp(2) substitutional configuration by making use of a purpose-made molecular precursor: dicyanopyrazophenanthroline (C16H6N6).es_ES
dc.description.sponsorshipP.A. acknowledges the contribution of the CA COST Action no. CA15107 (MultiComp). M.C. and A.M.-A. acknowledge support of the Basque Science Foundation for Science (Ikerbasque), POLYMAT, the University of the Basque Country (Grupo de Investigacion GIU17/054 and SGIker), Gobierno Vasco (BERC program), and Gobierno de Espana (Ministerio de Economia y Competitividad CTQ2016-77970R). M.C. and A.M.-A. thank technical and human support provided by SGIker of UPV/EHU and European funding (ERDF and ESF). A.M.-A. acknowledges that this project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation Programme (grant agreement no. 722951).es_ES
dc.language.isoenges_ES
dc.publisherAmerican Chemical Societyes_ES
dc.relationinfo:eu-repo/grantAgreement/EC/H2020/722951es_ES
dc.relationinfo:eu-repo/grantAgreement/MINECO/CTQ2016-77970Res_ES
dc.rightsinfo:eu-repo/semantics/openAccesses_ES
dc.rights.urihttp://creativecommons.org/licenses/by/3.0/es/*
dc.subjectdoped graphenees_ES
dc.subjecthigh-qualityes_ES
dc.subjectelectronic-structurees_ES
dc.subjectmonolayer graphenees_ES
dc.subjectgrowthes_ES
dc.subjectoxygenes_ES
dc.subjectCU(111)es_ES
dc.subjecthydrogenes_ES
dc.subjectdefectses_ES
dc.subjectsheetses_ES
dc.titleExclusive Substitutional Nitrogen Doping on Graphene Decoupled from an Insulating Substratees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.holderThis is an open access article published under a Creative Commons Attribution (CC-BY) Licensees_ES
dc.rights.holderAtribución 3.0 España*
dc.relation.publisherversionhttps://pubmed.ncbi.nlm.nih.gov/33072238/es_ES
dc.identifier.doi10.1021/acs.jpcc.0c06415
dc.contributor.funderEuropean Commission
dc.departamentoesCiencia y tecnología de polímeroses_ES
dc.departamentoeuPolimeroen zientzia eta teknologiaes_ES


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